From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW

authors

Buckley J.
Pro T.
Barattin R.
Calborean A.
Huang K.
Aiello V.
Nicotra G.
Gely M.
Delapierre G.
Jalaguier E.
Duclairoir F.
Chevalier N.
Mariolle D.
Spinella C.
Lombardo S.
Blaise P.
Maldivi P.
Ghibaudo G.
Baptist R.
de Salvo B.

document type

COMM

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